STB3NK60ZT4(2018) データシート - STMicroelectronics
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STB3NK60ZT4
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34 Pages
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893.9 kB
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STMicroelectronics
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
APPLICATIONs
• Switching applications
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