STB3NK60ZT4(2018) データシートの表示（PDF） - STMicroelectronics
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STB3NK60ZT4
(Rev.:2018)
(Rev.:2018)
STMicroelectronics
STB3NK60ZT4 Datasheet PDF : 34 Pages
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STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V
IDSS
IGSS
Zero gate voltage drain
current
Gate body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V, TC = 125 °C (1)
VDS = 0 V, VGS = ±20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 1.2 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
600
V
1
µA
50
µA
±10
µA
3
3.75
4.5
V
3.2
3.6
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
311
Coss
Crss
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V
-
43
-
pF
8
Coss eq. (1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
26
-
pF
Qg
Total gate charge
VDD = 480 V, ID = 2.4 A, VGS = 0 to 10 V
11.8
-
Qgs
Gate-source charge
(see Figure 16. Test circuit for gate charge
-
2.6
nC
Qgd
Gate-drain charge
behavior)
-
6.4
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 1.5 A,
9
RG = 4.7 Ω, VGS = 10 V
14
(see Figure 15. Test circuit for resistive load
-
19
-
ns
switching times and Figure 20. Switching
time waveform)
14
DS2912 - Rev 6
page 3/34
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