DESCRIPTION
The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General Features
■ WORLD’S LOWEST ON RESISTANCE
■ TYPICAL RDS(on) = 0.140 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
   CHARGE
■ LOW GATE INPUT RESISTANCE

APPLICATIONS
   The MDmesh™ II family is very suitable for 
   increase the power density of high voltage 
   converters allowing system miniaturization and higher
   efficiencies.