STI15NM65N データシート - STMicroelectronics
部品番号
STI15NM65N
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18 Pages
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STMicroelectronics
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
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コンポーネント説明
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N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode)
STMicroelectronics
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
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