STB23NM60ND(2008) データシート - STMicroelectronics
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STB23NM60ND
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STMicroelectronics
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
■ Switching applications
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N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode)
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N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) ( Rev : 2007 )
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N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
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N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
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N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
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