datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Silicon Storage Technology  >>> SST36VF1602 PDF

SST36VF1602 データシート - Silicon Storage Technology

SST36VF1601 image

部品番号
SST36VF1602

コンポーネント説明

Other PDF
  no available.

PDF
DOWNLOAD     

page
26 Pages

File Size
261 kB

メーカー
SST
Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601/ 1602 write (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601/1602 devices conform to JEDEC standard pinouts for x16 memories.
   
FEATURES:
• Organized as 1M x16
• Dual-Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601: 12 Mbit + 4 Mbit
    – 16 Mbit Top Sector Protection
    - SST36VF1602: 4 Mbit + 12 Mbit
• Single 2.7-3.6V Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA (typical)
    – Standby Current: 4 µA (typical)
    – Auto Low Power Mode: 4 µA (typical)
• Hardware Sector Protection/WP# Input Pin
    – Protects 4 outer most sectors (4 KWord) in the
        larger bank by driving WP# low and unprotects
        by driving WP# high
• Hardware Reset Pin (RESET#)
    – Resets the internal state machine to reading
        data array
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Read Access Time
    – 70 and 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory
    Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-Pin TSOP (12mm x 20mm)
    – 48-Ball TFBGA (8mm x 10mm)
   

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
Silicon Storage Technology
UT8CR512K32 16 Megabit SRAM ( Rev : 2004 )
Aeroflex Corporation
16 Megabit FlashBank Memory
Silicon Storage Technology
16 Megabit FlashBank Memory
SANYO -> Panasonic

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]