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SST34HF1642D-70-4E-LPE データシート - Silicon Storage Technology

SST34HF1602C-70-4C-B1PE image

部品番号
SST34HF1642D-70-4E-LPE

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38 Pages

File Size
446.8 kB

メーカー
SST
Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.


FEATURES:
• Flash Organization: 1M x16 or 2M x8
• Dual-Bank Architecture for Concurrent Read/Write Operation
   – 16 Mbit: 4 Mbit + 12 Mbit
• (P)SRAM Organization:
   – 2 Mbit: 128K x16 or 256K x8
   – 4 Mbit: 256K x16 or 512K x8
   – 8 Mbit: 512K x16 or 1024K x8
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption:
   – Active Current: 25 mA (typical)
   – Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
   – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
   – Resets the internal state machine to reading data array
• Byte Selection for Flash (CIOF pin)
   – Selects 8-bit or 16-bit mode
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Read Access Time
   – Flash: 70 ns
   – (P)SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
   – SST: 128 bits
   – User: 128 bits
• Latched Address and Data
• Fast Erase and Word-/Byte-Program (typical):
   – Sector-Erase Time: 18 ms
   – Block-Erase Time: 18 ms
   – Chip-Erase Time: 35 ms
   – Word-Program Time: 7 µs
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
   – Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
   – 56-ball LFBGA (8mm x 10mm)
   – 62-ball LFBGA (8mm x 10mm)

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部品番号
コンポーネント説明
PDF
メーカー
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash ( Rev : 2001 )
Silicon Storage Technology
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
2 Mbit Flash + 1 Mbit SRAM ComboMemory
Silicon Storage Technology
2 Mbit Flash + 1 Mbit SRAM ComboMemory ( Rev : 2001 )
Silicon Storage Technology
4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory
Silicon Storage Technology

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