PRODUCT DESCRIPTION
The SST36VF1601 is 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601 device conforms to JEDEC standard pinouts for x16 memories.
   
FEATURES:
• Organized as 1M x16
• Dual Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA
    – Standby Current: 4 µA
• Hardware Sector Protection/WP# Input Pin
    – Protects 4 outermost sectors (4 KWord) in the
        larger bank by driving WP# low and unprotects
        by driving WP# high
• Hardware Reset Pin (RST#)
    – Resets the internal state machine to reading
        array data
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Fast Read Access Time
    – 70 ns
• Latched Address and Data
• Fast Erase and Word-Program (typical):
    – Sector-Erase Time: 18 ms
    – Block-Erase Time: 18 ms
    – Chip-Erase Time: 70 ms
    – Word-Program Time: 14 µs
    – Chip Rewrite Time: 8 seconds
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-lead TSOP (12mm x 20mm)
    – 48-ball TFBGA (8mm x 10mm)