SSM6N25TU データシート - Toshiba
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SSM6N25TU
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Toshiba
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V)
Ron = 190mΩ (max) (@VGS = 2.5 V)
Ron = 145mΩ (max) (@VGS = 4.0 V)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
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