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RMPA2455 データシート - Fairchild Semiconductor

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部品番号
RMPA2455

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10 Pages

File Size
573.4 kB

メーカー
Fairchild
Fairchild Semiconductor Fairchild

General Description
The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.


FEATUREs
■ 30 dB small signal gain
■ 30 dBm output power @ 1 dB compression
■ 3% EVM at 22 dBm modulated power out
■ 5.0 V positive collector supply operation
■ Two power saving shutdown options (bias and logic control)
■ Integrated power detector with 20 dB dynamic range
■ RoHS compliant low profile 16 pin 3 x 3 x 0.9 mm leadless package
■ Internally matched to 50Ω and DC blocked RF input/output
■ Optimized for use in 802.11b/g Access Point applications

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部品番号
コンポーネント説明
PDF
メーカー
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
Fairchild Semiconductor
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2003 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation

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