DESCRIPTION
The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.

KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4 – 2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current Icq ~50mA
◾ Power Gain ~34dB @ 2.45GHz and Pout = 19dBm
◾ Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM
◾ EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm
◾ Small Footprint (3 x 3 mm2)
◾ Low Profile (0.9mm)

APPLICATIONS
◾ IEEE 802.11b/g