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RF2306 データシート - RF Micro Devices

RF2306 image

部品番号
RF2306

コンポーネント説明

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page
4 Pages

File Size
57.7 kB

メーカー
RFMD
RF Micro Devices RFMD

Product Description
The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2000MHz.


FEATUREs
• DC to 2000MHz Operation
• Internally matched Input and Output
• 20dB Small Signal Gain
• 3.5dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply

Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment

Page Link's: 1  2  3  4 

部品番号
コンポーネント説明
PDF
メーカー
General Purpose Amplifier
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
General Purpose Amplifier ( Rev : 2016 )
ON Semiconductor
General Purpose Amplifier
ON Semiconductor
General Purpose Amplifier ( Rev : 2001 )
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices

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