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RF2311 データシート - RF Micro Devices

RF2311 image

部品番号
RF2311

コンポーネント説明

Other PDF
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page
6 Pages

File Size
60 kB

メーカー
RFMD
RF Micro Devices RFMD

Product Description
The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz.


FEATUREs
• DC to well over 1600MHz Operation
• Internally Matched Input and Output
• 14dB Small Signal Gain
• 4.2dB Noise Figure
• +9dBm Output Power
• Single 2.7V to 6V Positive Power Supply

Typical Applications
• General Purpose High Bandwidth Gain Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers

Page Link's: 1  2  3  4  5  6 

部品番号
コンポーネント説明
PDF
メーカー
General Purpose Amplifier
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
General Purpose Amplifier ( Rev : 2016 )
ON Semiconductor
General Purpose Amplifier
ON Semiconductor
General Purpose Amplifier ( Rev : 2001 )
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
General Purpose Amplifier
Motorola => Freescale

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