Description:
The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

FEATUREs:
• High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz
• Emitter ballasted construction and gold metallization for high reliability, and good performances
• Low thermal resistance ceramic package with flange
• Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25°C

APPLICATIONs:
  30 to 35 watts output power amplifiers in VHF band mobile radio applications.