The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

FEATUREs:
• High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
• Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

APPLICATION:
• 4 to 5 Watt Output Power Amplifier Applications in VHF Band