GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES
• High Speed: 12, 15, 20, 25, 35, and 45ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power, CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE
• All inputs and outputs are TTL compatible