RF Power LDMOS Transistors
High Ruggedness N-Channel Enhancement--Mode Lateral MOSFETs

Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital television transmitters.

FEATUREs
• Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout)
• Exceptional Efficiency for Class AB Analog or Digital Television Operation
• Full Performance across Complete UHF TV Spectrum, 470--860 MHz
• Capable of 600 Watt CW Output Power with Adequate Thermal Management
• Integrated Input Matching
• Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V − Improves Class C Performance, e.g. in a Doherty Peaking Stage − Enables Fast, Easy and Complete Shutdown of the Amplifier
• Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation
• Excellent Thermal Characteristics
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.