RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs

These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The devices are suitable for use in pulse applications.

FEATUREs
• Internally Input and Output Matched for Broadband Operation and Ease of Use
• Device Can Be Used in a Single--Ended, Push--Pull or Quadrature
   Configuration
• Qualified up to a Maximum of 50 VDD Operation
• High Ruggedness, Handles > 20:1 VSWR
• Integrated ESD Protection with Greater Negative Voltage Range for Improved
   Class C Operation and Gate Voltage Pulsing
• Characterized with Series Equivalent Large--Signal Impedance Parameters

Typical Applications
• Commercial L--Band Radar Systems