The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor Array
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
• Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.