The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz frequency range.

• Specified 28 Volts, 30 MHz Characteristics
   Output Power = 150 Watts
   Power Gain = 15 dB (Typ)
   Efficiency = 40% (Typ)
• Superior High Order IMD
• IMD(d3) (150 W PEP) — –30 dB (Typ)
• IMD(d11) (150 W PEP) — –60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR