MRF587(V2) データシート - M/A-COM Technology Solutions, Inc.
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MRF587
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M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon High Frequency Transistor
Noise Figure 3.0 dB@ 500MHz
Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
• Low noise figure —
NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
• High power gain —
GU(max) = 16.5 dB (typ.) @ f = 500 MHz
• Ion implanted
• All gold metal system
• High fT — 5.5 GHz
• Low intermodulation distortion:
TB3 = –70 dB
DIN = 125 dB μV
• Nichrome emitter ballast resistors
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The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
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