The RF Line NPN Silicon RF Power Transistor

Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

• Specified 12.5 Volt, 30 MHz Characteristics —
   Output Power = 100 W (PEP)
   Minimum Gain = 10 dB
   Efficiency = 40%
• Intermodulation Distortion @ 100 W (PEP) —
   IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR