Description
M/A-COMs MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

FEATUREs
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion

APPLICATIONs
    The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, automotive radar detectors, etc. This device can be used through 110 GHz.