MA4E1310 データシートの表示（PDF） - M/A-COM Technology Solutions, Inc.

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MA4E1310

GaAs Flip Chip Schottky Barrier Diode

M/A-COM Technology Solutions, Inc. 

MA4E1310

GaAs Flip Chip Schottky Barrier Diode

M/A-COM Products

Rev. V3

Forward Current vs Temperature

100.00

10.00

1.00

+125°C

25°C

- 50°C

0.10

0.01

0.00

0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

Forward Voltage (V)

Absolute Maximum Ratings 1

Parameter

Operating Temperature

Storage Temperature

Incident LO Power

Incident RF Power

Mounting Temperature

Electrostatic Discharge ( ESD ) Classification 2

Absolute Maximum

-65 °C to +125 °C

-65 °C to +150 °C

+20 dBm

+20 dBm .

+235°C for 10 seconds

Class 0

1. Operation of this device above any one of these parameters may cause permanent damage.

2. Human Body Model

3

ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

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