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LX5514 データシート - Microsemi Corporation

LX5514 image

部品番号
LX5514

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Microsemi
Microsemi Corporation Microsemi

DESCRIPTION
The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). Power gain of 28dB is obtained with a low quiescent current of 80mA.
KEY FEATURES
▪ Advanced InGaP HBT
▪ 2.3 – 2.5GHz Operation
▪ Single-Polarity 3.3V Supply
▪ Quiescent Current 80mA
▪ Power Gain 28dB
▪ Total Current 150mA for POUT=20dBm OFDM
▪ EVM ~3 % 54Mbps / 64QAM
▪ Small Footprint: 2 x 2mm
▪ Low Profile: 0.46mm


APPLICATIONS
▪ IEEE 802.11b/g

 

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部品番号
コンポーネント説明
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メーカー
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.3 – 2.7 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2003 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation

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