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LD1003S データシート - ETC

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部品番号
LD1003S

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[Lovoltech, Inc.]

Description
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor “No Body Diode” provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.


FEATUREs
◆ Trench Power JFET with low threshold voltage Vth.
◆ Device fully “ON” with Vgs = 0.7V
◆ Optimum for “Low Side” Buck Converters
◆ Optimized for Secondary Rectification in isolated DC-DC
◆ Low Rg and low Cds for high speed switching
◆ No “Body Diode”; extremely low Cds
◆ Added Fast Recovery Schottky Diode in same package


APPLICATIONs
◆ DC-DC Converters
◆ Synchronous Rectifiers
◆ PC Motherboard Converters
◆ Step-down power supplies
◆ Brick Modules
◆ VRM Modules

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High Performance N-Channel POWERJFET™ with PN Diodes
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N-CHANNEL MOSFET WITH SCHOTTKY DIODE
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N-CHANNEL MOSFET WITH SCHOTTKY DIODE ( Rev : 2003 )
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