LD1003S データシートの表示（PDF） - Unspecified
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LD1003S Datasheet PDF : 5 Pages
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Thermal Resistance
Symbol
Parameter
RΘJA Thermal Resistance Junction-to-Ambient
RΘJC Thermal Resistance Junction-to-Case
DPAK
Ratings
80
1.6
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BVDSX Breakdown Voltage
ID = 0.5 mA
24
Drain to Source
VGS= -4 V
BVGDO Breakdown Voltage
IG = -50µA
Gate to Drain
BVGSO
RDS(ON)
Breakdown Voltage
Gate to Source
Static Drain to Source1 On
Resistance (Current flows
drain-to-source) See Fig. 1
IG = -1 mA
IG = 40 mA, ID=10A
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
VGS(TH) Gate Threshold Voltage
VDS=0.1 V, ID=250µA
-1200
Dynamic
QG
Total Gate Charge
QGD
Gate to Drain Charge
QGS
Gate to Source Charge
QSW
Switching Charge
RG
Gate Resistance
∆VDrive =5V, ID=10A,VDS=15V
TD(ON)
TR
TD(OFF)
TF
CISS
COSS
CGS
CGD
CDS
Turn-on Delay Time
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
VDD=16V, ID=15A
VDrive = 5 V
Clamped Inductive Load
VDS=10V, VGS= -5 V, 1MHz.
Typ.
-12
3.0
3.5
3.6
-800
23
14
1.8
15
0.5
5
12
2
10
3200
900
2250
750
150
Schottky Diode
IR
Reverse Leakage
VR=20V, Vgs = -4V
0.25
VF
Forward Voltage
IF = 1 A
300
VF
Forward Voltage
IF = 10 A
700
VF
Forward Voltage
IF = 20 A
900
Qrr
Reverse Recovery Charge
Is = 20 A di/dt = 100A/us,
8
Notes:
1. Pulse width <= 500µs, duty cycle < = 2%
Units
°C/W
°C/W
Max. Units
V
-28
V
-10
V
4.0
mΩ
5.5
mΩ
-600 mV
nC
nC
nC
nC
Ω
ns
pF
0.3 mA
mV
mV
mV
nC
2
LD1003S
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
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