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L6387ED013TR データシート - STMicroelectronics

L6387E image

部品番号
L6387ED013TR

コンポーネント説明

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The L6387E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.


FEATUREs
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF load
■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
■ Internal bootstrap diode
■ Outputs in phase with inputs
■ Interlocking function

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部品番号
コンポーネント説明
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