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L6386E データシート - STMicroelectronics

L6386E image

部品番号
L6386E

コンポーネント説明

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The L6386E is an high-voltage device, manufactured with the BCD "OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.


FEATUREs
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF load
■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
■ Under voltage lock out on lower and upper driving section
■ Integrated bootstrap diode
■ Outputs in phase with inputsL6386E

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部品番号
コンポーネント説明
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