K9F2G08R0A データシートの表示（PDF） - Samsung

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K9F2G08R0A

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08R0A

K9F2G08U0A

Document Title

256M x 8 Bit NAND Flash Memory

Revision History

Revision No History

0.0

1. Initial issue

0.1

1. 1.8V part is added.

2. tRHW, tCSD parameter is defined.

3. 4G DDP LGA part is deleted.

4. Technical note is added.(p.18)

0.2

1. FBGA package size is changed

2. 1.8V TSOP is deleted

0.3

1. 1.8V Ioh/Iol condition is changed

2. Min. tADL @ 3.3V is changed form 70ns to 100ns

0.4

1. 1.8V device supports Copy-Back Program

1.0

1.1

1. 1.8V AC timing is changed

2. tRPB/tRCB/tREAB is added for 1.8V device

1.2

1. tCSD is changed.(10ns -> 0ns)

1.3

1. tCS 31ns -> 25ns, tREH 15ns -> 10ns (@ 1.8V)

FLASH MEMORY

Draft Date Remark

Nov. 09. 2005 Advance

Mar. 17th. 06 Advance

May 25th 2006 Preliminary

June 1st 2006 Preliminary

June 29th 2006 Preliminary

Aug 23th 2006 Final

Jan. 15th 2007

Mar. 15th 2007

June 4th 2007

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

2

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