Description
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATUREs
• Low gate charge
  QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
  RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings