K3115 データシートの表示（PDF） - NEC => Renesas Technology
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K3115 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Description
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
Features
• Low gate charge
QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
Ordering Information
Part number
Package
2SK3115
Isolated TO-220
Absolute Maximum Ratings (TA = 25 °C)
Drain to source voltage (VGS = 0)
VDSS
Gate to source voltage (VDS = 0)
VGSS
Drain current (DC) (TC = 25 °C)
Drain current (pulse) Note1
ID(DC)
ID(pulse)
Total power dissipation (TA = 25 °C)
PT1
Total power dissipation (TC = 25 °C)
PT2
Channel temperature
Tch
Storage temperature
Single avalanche current Note2
Single avalanche energy Note2
Diode recovery dv/dt Note3
Tstg
IAS
EAS
dv/dt
600
V
±30
V
±6.0
A
±24
A
2.0
W
35
W
150
°C
−55 to +150 °C
6.0
A
24
mJ
3.5
V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/µs, TA = 25 °C
The information in this document is subject to change without notice.
Document No. D13338EJ1V0DS00 (1st edition)
The mark • shows major revised points.
Date Published October 1998 NS CP (K)
Printed in Japan
©
1998
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