DESCRIPTION
TheISSIIS61LV6464 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. It is organized as 65,536 words by 64 bits, fabricated withISSIs advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES
• Fast access time:
    – -100 MHz; 6 ns-83 MHz
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Five chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 128-Pin TQFP 14mm x 20mm package
• Single +3.3V power supply
• 2.5V VDDQ (I/O supply)
• Control pins mode upon power-up:
    – MODE in interleave burst mode
    – ZZ in normal operation mode These control pins can be connected to GNDQ or VDDQ to alter their power-up state