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IS61C1024AL データシート - Integrated Silicon Solution

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部品番号
IS61C1024AL

コンポーネント説明

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17 Pages

File Size
103.8 kB

メーカー
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.


FEATURES
• High-speed access time: 12, 15 ns
• Low active power: 160 mW (typical)
• Low standby power: 1000 µW (typical) CMOS standby
• Output Enable (OE) and two Chip Enable (CE1and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive temperature ranges available
• Lead free available

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部品番号
コンポーネント説明
PDF
メーカー
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 HIGH SPEED CMOS STATIC RAM
Winbond

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