IS61C1024AL データシートの表示（PDF） - Integrated Silicon Solution

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IS61C1024AL

128K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C1024AL, IS64C1024AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Test Condition

VDR VDDforDataRetention

See Data Retention Waveform

IDR

Data Retention Current

VDD = 2.0V, CE1 ≥ VDD – 0.2V

or CE2 ≤ 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

Auto.

DATA RETENTION WAVEFORM (CE1 Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE1

GND

CE1 ≥ VDD - 0.2V

DATA RETENTION WAVEFORM (CE2 Controlled)

Data Retention Mode

VDD

4.5V

CE2

2.2V

VDR

0.4V

GND

tSDR

CE2 ≤ 0.2V

ISSI ®

Min. Typ.(1)

2.0

— 200

——

——

0

tRC

Max. Unit

5.5 V

400 µA

450

500

— ns

— ns

tRDR

tRDR

10

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

01/24/05

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