Description
The IRS2509 is a high-voltage, high-speed power MOSFET and IGBT half-bridge driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable a ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V.

FEATUREs
• 600V half-bridge driver
• Tolerant to negative transient voltages
• Gate drive supply range from 10 V to 20 V
• Under-voltage lock-out for both channels
• 3.3 V, 5 V and 15 V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Internal 530 ns dead-time
• Lower di/dt gate driver for better noise immunity
• Shut down input turns off both channels
• RoHS compliant

APPLICATIONs:
    *HID Electronic Ballasts