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IPD65R225C7(2020) データシート - Infineon Technologies

IPD65R225C7 image

部品番号
IPD65R225C7

コンポーネント説明

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14 Pages

File Size
650 kB

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Infineon
Infineon Technologies Infineon

650V CoolMOS™ C7 Power Device

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation.


FEATUREs
• Increased MOSFET dv/dt ruggedness
• Better efficiency due to lowest in market FOM RDS(on) *Eoss and RDS(on)*Qg
• Best in class RDS(on) in TO220/TO247/DPAK and D2PAK
• Easy to use/drive
• Pb-free plating, Halogen free mold compound


Benefits
• Enabling higher system efficiency
• Enabling higher frequency/increased power density solutions
• System cost/size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures

Potential applications
   PFC stages and hard switching PWM stages for e.g. Computing, Server,
   Telecom, UPS and Solar.


部品番号
コンポーネント説明
PDF
メーカー
650V CoolMOS™ C7 Power Device
Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
Infineon Technologies
650V CoolMOS™ C7 Power Device
Infineon Technologies
650V CoolMOS™ C7 Power Device
Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
Infineon Technologies
650V CoolMOS™ C7 Power Device
Infineon Technologies
650V CoolMOS™ C7 Power Device
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Infineon Technologies

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