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IPD65R190C7(2013) データシート - Infineon Technologies

IPD65R190C7 image

部品番号
IPD65R190C7

コンポーネント説明

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page
15 Pages

File Size
1.5 MB

メーカー
Infineon
Infineon Technologies Infineon

Description
​​​​​​​CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.


FEATUREs
• Increased MOSFET dv/dt ruggedness
• Better efficiency due to best in class FOM Rds(on)*Eoss and RDS(on)*Qg
• Better in class RDS(on)/package 
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
​​​​​​​• Qualified for industrial grade applications according to JEDEC(J-STD20
   and JESD22)
​​​​​​​
Benefits
• Enabling higher system efficiency
• Enabling higher frequency/increased power density solutions
• System cost/size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures


APPLICATIONs
   PFC stages and hard switching PWM stages for e.g. Computing, Server,
   Telecom, UPS and Solar


部品番号
コンポーネント説明
PDF
メーカー
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Infineon Technologies

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