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HY27US08561M-T データシート - Hynix Semiconductor

HY27SS(08/16)561M image

部品番号
HY27US08561M-T

Other PDF
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page
44 Pages

File Size
725.1 kB

メーカー
Hynix
Hynix Semiconductor Hynix

DESCRIPTION
The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.


FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
    - Cost effective solutions for mass storage applications
NAND INTERFACE
    - x8 or x16 bus width.
    - Multiplexed Address/ Data
    - Pinout compatibility for all densities
SUPPLY VOLTAGE
    - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
    - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
Memory Cell Array
    - 256Mbit = 528 Bytes x 32 Pages x 2,048 Blocks

PAGE SIZE
- x8 device : (512 + 16 spare) Bytes : HY27US08561M
- x16 device: (256 + 8 spare) Words : HY27US16561M
BLOCK SIZE
    - x8 device: (16K + 512 spare) Bytes
    - x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
    - Random access: 10us (max)
    - Sequential access: 50ns (min)
    - Page program time: 200us (typ)
COPY BACK PROGRAM MODE
    - Fast page copy without external buffering

FAST BLOCK ERASE
    - Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE

CHIP ENABLE DONT CARE OPTION
    - Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
    - Boot from NAND support
    - Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
    - Program/Erase locked during Power transitions
DATA INTEGRITY
    - 100,000 Program/Erase cycles
    - 10 years Data Retention
PACKAGE
    - HY27US(08/16)561M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
        - HY27US(08/16)561M-T (Lead)
        - HY27US(08/16)561M-TP (Lead Free)
    - HY27US08561M-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
        - HY27US08561M-V (Lead)
        - HY27US08561M-VP (Lead Free)
    - HY27(U/S)S(08/16)561M-F(P) : 63-Ball FBGA (9.0 x 11 x 1.0 mm)
        - HY27US(08/16)561M-F (Lead)
        - HY27US(08/16)561M-FP (Lead Free)
        - HY27SS(08/16)561M-F (Lead)
        - HY27SS(08/16)561M-FP (Lead Free)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
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512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
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