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GT8G136 データシート - Toshiba

8G136 image

部品番号
GT8G136

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Strobe Flash Applications

•  Compact and Thin (TSSOP-8) package
•  Enhancement-mode
•  Peak collector current: IC= 150 A (max)
                               (@VGE=3.0V(min),Ta=70℃(max))/

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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