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GT50J325(V2) データシート - Toshiba

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GT50J325

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High Power Switching Applications
Fast Switching Applications

• Fourth generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
   • High speed: tf = 0.05 μs (typ.)
   • Low switching loss: Eon = 1.30 mJ (typ.)
                                   : Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector


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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : 2002 )
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