GT8G132 データシート - Toshiba
部品番号
GT8G132
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6 Pages
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183.5 kB
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Toshiba
Strobe Flash Applications
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)
部品番号
コンポーネント説明
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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