GT40T301 データシート - Toshiba
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GT40T301
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Toshiba
Parallel Resonance Inverter Switching Applications
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A)
FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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