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GT15J121 データシート - Toshiba

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GT15J121

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Toshiba
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High Power Switching Applications
Fast Switching Applications

●  The 4th generation
●  Enhancement-mode
●  Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)
    ●  High speed :tr=0.03μ s(typ.) :tf=0.08μ s(typ.)
    ●  Low switching loss :Eon=0.23mJ(typ.) :Eoff=0.18mJ(typ.)

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT ( Rev : 2001 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba

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