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GP801FSM18 データシート - Dynex Semiconductor

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部品番号
GP801FSM18

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Dynex Semiconductor Dynex

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP801FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.


FEATURES
■ Low VCE(SAT)
■ 800A Per Switch
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability
■ Motor Controllers
■ Traction Drives
■ Low Loss System Retrofit

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