datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Dynex Semiconductor  >>> GP800DDM12 PDF

GP800DDM12 データシート - Dynex Semiconductor

GP800DDM12 image

部品番号
GP800DDM12

コンポーネント説明

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
111.1 kB

メーカー
Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.


FEATURES
■ High Thermal Cycling Capability
■ 800A Per Switch
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
Hi-Reliability Dual Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Dual Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Chopper Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module
Dynex Semiconductor
1800V Hi-reliability dual switch low voltage IGBT module
Dynex Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]