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GP200MHS12 データシート - Dynex Semiconductor

GP200MHS12 image

部品番号
GP200MHS12

コンポーネント説明

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10 Pages

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Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.


FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction


APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters

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部品番号
コンポーネント説明
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メーカー
Half Bridge IGBT Module ( Rev : 2004 )
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