GP200MHS12 データシートの表示（PDF） - Dynex Semiconductor
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GP200MHS12 Datasheet PDF : 10 Pages
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GP200MHS12
18
VGE = ±15V
16 VCE = 900V
14
12
10
Tcase = 125˚C
Tcase = 25˚C
8
6
4
2
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
Fig. 7 Diode typical turn-off energy vs collector current
900
800
700
600
500
400
300
200
100
0
0
td(off)
td(on)
Tj = 125˚C
VGE = ±15V
VCE = 600V
Rg = 4.7Ω
tf
tr
50
100
150
200
Collector current, IC - (A)
Fig. 8 Typical switching characteristics
400
10000
350
300
1000 IC max. (single pulse)
Tj = 25˚C
Tj = 125˚C
250
200
100
IC max. DC
50µs
100µs
150
100
10
(continuous)
tp = 1ms
50
0
1
0
0.5
1
1.5
2
2.5
3
3.5
1
Forward voltage, VF - (V)
10
100
1000
Collector-emitter voltage, Vce - (V)
10000
Fig. 9 Diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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