General Description
This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• Q1: N-Channel
    9.3A, 30V RDS(on) = 18 mΩ @ VGS = 10V RDS(on) = 23 mΩ @ VGS = 4.5V
• Q2: P-Channel
    –5.6A, –20V RDS(on) = 46 mΩ @ VGS = –4.5V RDS(on) = 63 mΩ @ VGS = –2.5V

APPLICATIONs
• DC/DC converter
• Power management
• Load switch
• Battery protection