FDS4501H データシートの表示（PDF） - Fairchild Semiconductor
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FDS4501H Datasheet PDF : 8 Pages
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Typical Characteristics Q1
10
ID = 9.3A
8
6
VDS = 5V
10
15V
4
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125 oC/W
T A = 25oC
0.01
0.01
0.1
100µs
1ms
10ms
100ms
1s
10s
DC
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
3000
2500
2000
1500
1000
500
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Rθ JA(t) = r(t) + Rθ JA
RθJA = 125 oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/ t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4501H Rev C(W)
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